irf9530n hexfet ? power mosfet pd - 91482c fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v -14 i d @ t c = 100c continuous drain current, v gs @ -10v -10 a i dm pulsed drain current ? -56 p d @t c = 25c power dissipation 79 w linear derating factor 0.53 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 250 mj i ar avalanche current ? -8.4 a e ar repetitive avalanche energy ? 7.9 mj dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-case CCC 1.9 r q cs case-to-sink, flat, greased surface 0.50 CCC c/w r q ja junction-to-ambient CCC 62 thermal resistance v dss = -100v r ds(on) = 0.20 w i d = -14a t o -22 0 ab l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l p-channel l fully avalanche rated description 5/13/98 s d g
irf9530n parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC -1.6 v t j = 25c, i s = -8.4a, v gs = 0v ? t rr reverse recovery time CCC 130 190 ns t j = 25c, i f = -8.4a q rr reverse recoverycharge CCC 650 970 nc di/dt = -100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -100 CCC CCC v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC -0.11 CCC v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.20 w v gs = -10v, i d = -8.4a ? v gs(th) gate threshold voltage -2.0 CCC -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 3.2 CCC CCC s v ds = -50v, i d = -8.4a CCC CCC -25 a v ds = -100v, v gs = 0v CCC CCC -250 v ds = -80v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 58 i d = -8.4a q gs gate-to-source charge CCC CCC 8.3 nc v ds = -80v q gd gate-to-drain ("miller") charge CCC CCC 32 v gs = -10v, see fig. 6 and 13 ? t d(on) turn-on delay time CCC 15 CCC v dd = -50v t r rise time CCC 58 CCC i d = -8.4a t d(off) turn-off delay time CCC 45 CCC r g = 9.1 w t f fall time CCC 46 CCC r d = 6.2 w, see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 760 CCC v gs = 0v c oss output capacitance CCC 260 CCC pf v ds = -25v c rss reverse transfer capacitance CCC 170 CCC ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC i gss ns 4.5 7.5 i dss drain-to-source leakage current ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -8.4a, di/dt -490a/s, v dd v (br)dss , t j 175c notes: ? starting t j = 25c, l = 7.0mh r g = 25 w , i as = -8.4a. (see figure 12) ? pulse width 300s; duty cycle 2%. -14 -56 a s d g s d g
irf9530n fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 0.1 1 10 100 d ds 20s pulse w idth t = 25c c a -i , d rain-to-source c urrent (a) -v , drain-to-source voltage (v) vgs to p - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bot tom - 4.5v -4.5v 0.1 1 10 100 0.1 1 10 100 d ds a -i , drain-to-source current (a) -v , drain-to-source volta g e ( v ) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 20 s pulse w idth t = 175c c 0.1 1 10 100 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source volta g e (v) v = -50v 20s pulse w idth t = 175c ds j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -14a
irf9530n fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v , f = 1mhz c = c + c , c shorte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 t = 25c t = 150c j j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) sin g le pulse t t = 175 c = 25 c j c -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 0 10 20 30 40 50 60 0 5 10 15 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -8.4a v = -20v ds v = -50v ds v = -80v ds
irf9530n fig 10a. switching time test circuit fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irf9530n fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 175 0 100 200 300 400 500 600 700 startin g t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -3.4a -5.9a -8.4a
irf9530n peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for p-channel hexfets
irf9530n lead assignments 1 - gate 2 - drain 3 - sou rc e 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) m in 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 d im e n s io n in g & to l e r a n c ing p e r a n s i y 1 4.5m , 1 9 82. 3 o u t lin e c o n f o r m s to je d e c o u t lin e to -2 20 a b . 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a part marking information to-220ab package outline to-220ab outline dimensions are shown in millimeters (inches) part number international rectifier lo g o example : this is an irf1010 w it h as se m b ly lo t c o de 9b1m assembly lo t co de date code (yyww) yy = year ww = week 9246 irf1010 9b 1m a world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 5/98
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/
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